Composition for etching and manufacturing method of semiconductor device using the same

A composition for etching, comprising,

• a first inorganic acid,
• a first additive represented by Chemical Formula 1,
• an ammonium-based compound at a proportion of 0.01% to 20% by weight with respect to the total amount of the composition for etching, and
• a solvent.
• (In Chemical Formula 1, X is O or N,
• R1 to R6 are each, independently, selected from the group consisting of hydrogen, a C1-C20 alkyl group, a C1-C20 alkoxy group, a C2-C20 alkenyl group, a C3-C20 cycloalkyl group, a C1-C20 aminoalkyl group, a C6-C20 aryl group, a C1-C20 alkyl carbonyl group, a C1-C20 alkyl carbonyloxy group, and a C1-C10 cyano alkyl group, and n11 is 0 or 1.)