Physically unclonable function device

A method for storing information in a memory area of a device, wherein the memory area comprises a matrix of memory cells having two rows and a plurality of columns, each memory cell comprising a state transistor and a selection transistor, the method comprising:

• selecting, by a column decoder, a first pair of adjacent bit lines corresponding to a first pair of adjacent columns;
• selecting a first gate control line corresponding to a first row;
• writing a first datum of the information into a first memory cell and a second memory cell of the first row, the first and second memory cells corresponding to the first pair of adjacent columns;
• selecting, by the column decoder, a second pair of adjacent bit lines corresponding to a second pair of adjacent columns;
• selecting a second gate control line corresponding to a second row;
• writing a second datum of the information into a third memory cell and a fourth memory cell of the second row, the third and fourth memory cells corresponding to the second pair of adjacent columns;
• repeating selecting and writing for subsequent pairs of adjacent columns until a penultimate datum of the information is written;
• and
• selecting, by the column decoder, a final bit line corresponding to a final column and writing a final datum of the information into a final memory cell.

An integrated circuit comprising:

• a first memory plane having a single bit line per column architecture;
• a second memory plane having a double bit line per column architecture;
• and
• a plurality of metallization layers,
• wherein a first metallization layer of the plurality of metallization layers corresponds to a first bit line of a first column in the first memory plane,
• wherein a second metallization layer of the plurality of metallization layers corresponds to a second bit line of a second column in the first memory plane, and a first bit line of a first column in the second memory plane, and
• wherein a third metallization layer of the plurality of metallization layers corresponds to a second bit line of the first column in the second memory plane.

A method for generating a unique unpredictable code, the method comprising:

• generating, by a first physical unclonable function module of an integrated device, an initial data group;
• generating, by a management module of the integrated device, an output data group from at least the initial data group;
• authorizing, by the management module, only D successive deliveries of the output data group for a first output interface of the integrated device, D being a non-zero positive integer, and preventing any additional deliveries of the output data group;
• and
• providing, at the first output interface of the integrated device, the unique unpredictable code,
• wherein the unique unpredictable code is the output data group.