Under-bump metallization structures and associated methods of formation
AssigneeSTMicroelectronics International N.V.
InventorMohamed BOUFNICHEL
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AssigneeSTMicroelectronics International N.V.
InventorMohamed BOUFNICHEL
Estimating the term…
Methods, systems, and devices for semiconductor manufacturing are described. One such method includes forming a first layer comprising a first material. A top surface of the first layer extends along a first direction and a second direction. In some cases, the method includes forming, on at least the top surface of the first layer, a second layer comprising a second material, and forming a void in the second layer. Forming the void may expose a portion of the top surface of the first layer. In some cases, the method may include forming one or more layers on a top surface of the second layer and on the exposed portion of the top surface of the first layer. The method may also include performing a material removal operation that lifts portions of the one or more layers formed on the top surface of the second layer off of the top surface.
A method comprising:
An apparatus comprising:
A product formed by a method comprising:
Dependencies are inferred from the claim text.