Plasma processing apparatus, substrate processing apparatus, and temperature control system
AssigneeTokyo Electron Limited
InventorKazuki HOSHI
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AssigneeTokyo Electron Limited
InventorKazuki HOSHI
Estimating the term…
A plasma processing apparatus includes a plasma process chamber; a substrate support that is disposed in the plasma process chamber and includes a first flow path; an upper electrode assembly that is disposed above the substrate support and includes a second flow path; a first chiller configured to maintain a temperature of a first temperature-controlled fluid at a first temperature, the first temperature-controlled fluid flowing through the first flow path; a second chiller configured to maintain a temperature of a second temperature-controlled fluid at a second temperature, the second temperature-controlled fluid flowing through the second flow path; and a thermoelectric element configured to generate power by a difference in temperature between the first temperature-controlled fluid and the second temperature-controlled fluid.
A plasma processing apparatus, comprising:
A substrate processing apparatus, comprising:
A temperature control system, comprising:
Dependencies are inferred from the claim text.