Treatment liquid, treatment method, and method for manufacturing electronic device
AssigneeFUJIFILM Corporation
InventorsKohei HAYASHI, Moe NARITA, Atsushi MIZUTANI
Life of this patent
Estimating the term…
Loading patent…
AssigneeFUJIFILM Corporation
InventorsKohei HAYASHI, Moe NARITA, Atsushi MIZUTANI
Estimating the term…
An object of the present invention is to provide a treatment liquid that has excellent removability of a metal part and suppressed dissolution of an insulating film in a case of being applied to an object to be treated, including the insulating film and the metal part. The treatment liquid of an embodiment of the present invention includes water, a fluoride source, periodic acid or a salt thereof, and a surfactant, and satisfies at least one of the following requirement A, the following requirement B, or the following requirement C. Requirement A: The surfactant includes a cationic surfactant and has a predetermined aliphatic hydrocarbon group, and the cationic surfactant has a molecular weight of 300 or less. Requirement B: The surfactant includes an anionic surfactant, the anionic surfactant has a predetermined group, and a mass ratio of a content of the anionic surfactant to a content of the fluoride source is 0.01 to 0.5. Requirement C: The surfactant includes a nonionic surfactant, and the nonionic surfactant does not have a fluorine atom and is represented by a predetermined formula.
A treatment liquid for a semiconductor substrate, the treatment liquid comprising:
Dependencies are inferred from the claim text.