Method and device for depositing a layer containing a group five element in a process chamber and subsequent cleaning of the process chamber

A method for depositing a layer on a substrate (6) in a process chamber (2) arranged in a reactor housing (1) of a chemical vapor deposition (CVD) reactor, the method comprising:

• heating the process chamber (2) to a process temperature;
• loading the substrate (6) into the process chamber (2);
• feeding a process gas into the process chamber (2), wherein at the process temperature, the process gas decomposes into decomposition products, and wherein the decomposition products are deposited as a layer on a first surface on the substrate (6) and are deposited as a parasitic coating on a second surface in the reactor housing (1),
• removing the substrate (6) from the process chamber (2);
• heating the process chamber (2) to a first cleaning temperature (T1);
• after the process chamber (2) has reached the first cleaning temperature (T1), feeding a halogen or a halogen compound fed into the process chamber (2) in a first cleaning step (21);
• after the first cleaning step (21), bringing the process chamber (2) to a second cleaning temperature (T2);
• after the process chamber (2) has reached the second cleaning temperature (T2), feeding O2 into the process chamber (2) in a second cleaning step (22);
• after the second cleaning step (22), bringing the process chamber (2) to a third cleaning temperature (T3);
• after the process chamber (2) has reached the third cleaning temperature (T3), feeding essentially only H2 into the process chamber (2) in a third cleaning step (23);
• and
• after the third cleaning step (23), cooling down the process chamber (2).