Electron-beam-assisted sputtering device and method therefor

Abstract

The present disclosure provides an electron-beam-assisted sputtering device and a method therefor, the device adding, as an electron supply means, an electron beam supply module to a conventional plasma sputtering device, so as to lower the process pressure of sputtering, thereby improving the quality of a deposition thin film. The electron-beam-assisted sputtering device of the present disclosure comprises: a vacuum chamber filled, at a certain process gas pressure, with a process gas for plasma formation; a target which is mounted in the vacuum chamber and to which power is supplied; a substrate onto which a sputtered target atom flies and is deposited due to the forceful collision, with the target, of a cation of the process gas present in the plasma formed on the surface of the target; and an electron beam supply module for supplying electrons toward the surface of the target on which the plasma is formed.

Dependencies are inferred from the claim text.