Synthesis and Applications of Porosity-based Semiconductor Heterojunctions
OwnerBozhi Tian, Aleksander Prominskiinventors
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Abstract
The present disclosure relates to semiconductor heterojunctions incorporating porous semiconductor materials. In one aspect, the present disclosure provides a device comprising a p-type semiconductor material comprising a nanoporous semiconductor layer and a nonporous semiconductor layer that form a heterojunction; and a flexible substrate comprising one or more of polymers on which the p-type semiconductor material is distributed such that the flexible substrate is in contact with the nonporous semiconductor layer.
Claims37
A device comprising a p-type semiconductor material comprising a nanoporous semiconductor layer and a nonporous semiconductor layer that form a heterojunction;
- and a flexible substrate comprising one or more of polymers on which the p-type semiconductor material is distributed such that the flexible substrate is in contact with the nonporous semiconductor layer.
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Dependencies are inferred from the claim text.