Method for making ito perovskite solar cells
AssigneeKing Fahd University of Petroleum and Minerals
InventorFiroz KHAN
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Abstract
The perovskite solar cell (PSC) includes a first layer containing a conducting material coated glass plate as a substrate, a second layer containing copper doped nickel oxide, a third layer containing a perovskite, a fourth layer containing nitrogen (N)-doped graphene quantum dots, a fifth layer containing phenyl-C61-butyric acid methyl ester and a top layer including conductive layer. A method for producing the perovskite solar cell is also discussed.
Claims20
The method of claim 15, wherein the third layer and the fourth layer are separate layers,
- wherein the N-doped graphene quantum dots are present on the surface of the third layer,
- wherein the perovskite is in the form of crystalline flakes with a mean diameter of 0.1 to 1 μm, and
- wherein the third layer is a continuous layer of the crystalline flakes.
The method of claim 15, wherein the perovskite solar cell has an interfacial charge transfer resistance of 1×105 to 9×105Ω.
The method of claim 15, wherein the perovskite solar cell has a charge carrier mobility of 7×10−4 to 1×10−3 cm2/Vs.
The method of claim 15, wherein the perovskite solar cell has a conversion efficiency of 16 to 20%.
(canceled)
The method of claim 15, wherein the perovskite solar cell has an integrated current density that is 5 to 10% greater than a perovskite solar cell without N-doped graphene quantum dots.
The method of claim 15, wherein the perovskite solar cell has a conversion efficiency that is 10 to 20% greater than a perovskite solar cell without N-doped graphene quantum dots.
The method of claim 15, wherein the perovskite solar cell has a recombination lifetime of 50 to 80 ns.
The method of claim 15, wherein the perovskite solar cell has an interfacial charge transfer of 3 to 10×105Ω.
(canceled)
The method of claim 15, wherein the perovskite solar cell has an ideality factor (n) of 0.8 to 1.5.
The method of claim 15, wherein the perovskite solar cell has a leakage current (JO) of 0.5 to 3×10−16 A/cm2.
The method of claim 15, wherein the perovskite solar cell has the fourth layer suppresses defect-assisted recombination.
The method of claim 15, wherein the perovskite solar cell has a conductivity of 2 to 6×10−8 Scm−1.
A method for producing a perovskite solar cell comprising, in order, (i) a first layer comprising a conducting material coated indium tin oxide plate as a substrate;
- (ii) a second layer comprising copper doped nickel oxide;
- (iii) a third layer comprising a methylammonium lead iodide (MAPbI3) perovskite;
- (iv) a fourth layer comprising N-doped graphene quantum dots;
- (v) a fifth layer comprising a fullerene derivative;
- and (vi) a top layer comprising a conductive layer, said method comprising:
- treating the conducting material coated indium tin oxide plate in UV ozone to produce the substrate as the first layer;
- coating copper doped nickel oxide on the top of the substrate to produce the second layer;
- coating the MAPbI3 perovskite on the second layer to produce the third layer;
- coating a solution of N-doped graphene quantum dots on the third layer to produce the fourth layer;
- coating the fullerene derivative on the fourth layer to produce the fifth layer;
- and
- coating the conductive layer on the fifth layer to produce the top layer,
- wherein the N-doped graphene quantum dots consist of N, C, O, and H.
Dependencies are inferred from the claim text.