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US 2025/0015169 A1Published application
Electronic device, quantum computer, and method for manufacturing electronic device
AssigneeFujitsu Limited
InventorMasayuki HOSODA
Life of this patent
Estimating the term…
Abstract
An electronic device includes a first film that is a first layered metal chalcogenide that is single-layered and has a first region and a second region, a second film that overlaps the second region and is a second layered metal chalcogenide that is single-layered or two or more-layered, and an electrode in contact with a laminate of the first film and the second film in the second region.
Claims20
An electronic device comprising:
- a first film that is a first layered metal chalcogenide that is single-layered and has a first region and a second region;
- a second film that overlaps the second region and is a second layered metal chalcogenide that is single-layered or two or more-layered;
- and
- an electrode in contact with a laminate of the first film and the second film in the second region.
1 more element
A quantum computer including an electronic device, the electric device comprising:
- a first film that is a first layered metal chalcogenide that is single-layered and has a first region and a second region;
- a second film that overlaps the second region and is a second layered metal chalcogenide that is single-layered or two or more-layered;
- and
- an electrode in contact with a laminate of the first film and the second film in the second region.
1 more element
A method for manufacturing an electronic device, the method comprising:
- preparing a first film that is a first layered metal chalcogenide that is single-layered and has a first region and a second region;
- and a second film that overlaps the second region and is a second layered metal chalcogenide that is single-layered or two or more-layered;
- and
- providing an electrode in contact with a laminate of the first film and the second film in the second region.
1 more element
Dependencies are inferred from the claim text.