Method for manufacturing semiconductor stack structure with ultra thin die

A method for manufacturing a semiconductor stack structure, comprising:

• manufacturing a plurality of semiconductor wafers, wherein each of the plurality of semiconductor wafers is manufactured by the following steps:
• providing a semiconductor substrate having an active surface and a backside;
• and
• carrying out a nitrogen ion implantation process at a first depth from the active surface of the semiconductor substrate and then carrying out a high temperature treatment process to form a silicon nitride layer as a stop layer, the stop layer dividing the semiconductor substrate into a first substrate part between the stop layer and the active surface and a second substrate part between the stop layer and the backside;
• carrying out a backside grinding process from the backside of a first semiconductor wafer of the plurality of semiconductor wafers to remove a portion of the second substrate part of the semiconductor wafer;
• carrying out a thinning process to form a thinned semiconductor wafer, the thinning process comprising:
• removing the remaining second substrate part to expose the stop layer and removing the stop layer to expose the first substrate part;
• bonding another semiconductor wafer of the plurality of semiconductor wafers to the first semiconductor wafer with the active surface of the another semiconductor wafer facing a surface of the first semiconductor wafer exposed by removing the stop layer;
• carrying out the same backside grinding process from the backside of the another semiconductor wafer to remove a portion of the second substrate part of the another semiconductor wafer, and carrying out the same thinning process to remove the remaining second substrate part to expose the stop layer and remove the stop layer to expose the first substrate part of the another semiconductor wafer;
• and
• repeating the bonding, the backside grinding, and the thinning process on one or more semiconductor wafers of the plurality of semiconductor wafers to bond more wafers.

A method for manufacturing a stack structure, comprising:

• manufacturing a plurality of wafers, the manufacturing of each of the plurality wafers comprising:
• providing a substrate having an active surface and a backside;
• implanting nitrogen ions to form a first layer at a first depth from the active surface;
• performing a high temperature treatment to form a silicon nitride layer as a stop layer at the first depth, the stop layer dividing the substrate into a first substrate part at a side of the active surface and a second substrate part at a side of the backside;
• on a first wafer of the plurality of wafers:
• removing the second substrate part to expose the stop layer;
• removing the stop layer to expose the first substrate part;
• bonding a second wafer of the plurality of wafers on the first wafer with first substrate part of the second wafer facing a surface of the first wafer that is exposed by removing the stop layer and, on the second wafer, performing the same processes of removing the second substrate part to expose the stop layer and removing the stop layer of the second wafer to expose the first substrate part;
• repeating the bonding and removing the second substrate part and the stop layer with one or more wafers to form a stack of bonded and thinned wafers.

A semiconductor wafer, comprising:

• a substrate having an active surface and a backside, the substrate comprising:
• a silicon nitride layer at a first depth from the active surface;
• a silicon dioxide layer at a second depth from the active surface of the wafer, the first depth being greater than the second depth, the silicon nitride layer and the silicon dioxide layer forming a stop layer, the stop layer dividing the substrate into a first substrate part at a side of the active surface and a second substrate part at a side of the backside;
• a plurality of conductive structures in the first substrate part;
• and
• a connection layer comprising a plurality of interconnection points on the active surface, the conductive structures being between the connection layer and the stop layer.