Method for manufacturing nanowire, method for manufacturing thin film transistor, thin film transistor and semiconductor device

Abstract

The present disclosure provides a method for manufacturing a nanowire, a method for manufacturing a thin film transistor, a thin film transistor and a semiconductor device. The method for manufacturing the nanowire includes: preparing an insulating layer on a first surface of a substrate; preparing a sacrificial layer on a surface of the insulating layer away from the substrate, and patterning the sacrificial layer to form a guide trench; preparing an inducing particle in the guide trench; preparing a precipitation layer on a surface of the sacrificial layer away from the substrate and in the guide trench, the precipitation layer covering the inducing particle; processing the precipitation layer to precipitate a preset element in the precipitation layer along the guide trench under an induction of the inducing particle to form a nanowire; and removing the sacrificial layer.

Dependencies are inferred from the claim text.