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US 2025/0014860 A1Published application
Ion implantation method and ion implanter
AssigneeSumitomo Heavy Industries Ion Technology Co., Ltd.
InventorsHiroshi MATSUSHITA, Masaki ISHIKAWA, Tsuyoshi NAKAJIMA, Takanori YAGITA
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Abstract
An ion implantation method includes: acquiring a measured value of a neutron dose rate measured at a predetermined position in an ion implanter when a first ion beam containing a first ion species is transported along a beamline; determining whether the measured value exceeds a predetermined threshold; transporting a second ion beam containing a second ion species having a larger mass number than the first ion species along the beamline when the measured value exceeds the predetermined threshold; and irradiating a wafer with the transported first ion beam after transport of the second ion beam.
Claims25
An ion implantation method comprising:
- acquiring at least one of a first measured value of a neutron dose rate that is measured at a predetermined position in an ion implanter when a first ion beam containing a first ion species with high energy is transported along a beamline in the ion implanter, and a first estimated value of the neutron dose rate that is estimated at the predetermined position when it is assumed that the first ion beam is transported along the beamline;
- determining whether or not at least one of the first measured value and the first estimated value exceeds a predetermined threshold;
- transporting a second ion beam containing a second ion species having a larger mass number than the first ion species along the beamline in a case where at least one of the first measured value and the first estimated value exceeds the predetermined threshold;
- and
- irradiating a wafer with the first ion beam transported along the beamline, after transport of the second ion beam.
2 more elements
An ion implanter comprising:
- a first gas supply source that supplies a source gas of a first ion species;
- a second gas supply source that supplies a source gas of a second ion species having a larger mass number than the first ion species;
- an ion source that generates an ion beam containing the first ion species or the second ion species by using the source gas that is supplied from the first gas supply source or the second gas supply source;
- a beamline unit that is configured to transport the ion beam along a beamline and includes an accelerator that accelerates the ion beam;
- an implantation processing chamber wherein implantation processing of irradiating a wafer with the ion beam transported by the beamline unit is performed;
- a memory in which a program is stored;
- and
- a processor,
- wherein the processor executes, based on the program:
- acquiring at least one of a first measured value of a neutron dose rate that is measured at a predetermined position in the ion implanter when a first ion beam containing the first ion species with high energy is transported along the beamline in the ion implanter, and a first estimated value of the neutron dose rate that is estimated at the predetermined position when it is assumed that the first ion beam is transported along the beamline;
- determining whether or not at least one of the first measured value and the first estimated value exceeds a predetermined threshold;
- transporting a second ion beam containing the second ion species having a larger mass number than the first ion species along the beamline in a case where at least one of the first measured value and the first estimated value exceeds the predetermined threshold;
- and
- irradiating the wafer with the first ion beam transported along the beamline, after transport of the second ion beam.
11 more elements
An ion implantation method comprising:
- acquiring a plurality of implantation conditions corresponding to a plurality of lots;
- determining a processing order of the plurality of lots by using the plurality of implantation conditions;
- and
- implanting, in the determined processing order, ions into a plurality of wafers included in each of the plurality of lots according to corresponding implantation conditions,
- wherein in a case where the acquired plurality of implantation conditions include a first implantation condition for implanting a first ion species with high energy and a second implantation condition for implanting a second ion species having a larger mass number than the first ion species, the processing order is determined such that the first ion species with high energy is implanted into a plurality of wafers included in a lot of the first implantation condition after the second ion species has been implanted into a plurality of wafers included in a lot of the second implantation condition.
2 more elements
Dependencies are inferred from the claim text.