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US 2025/0014595 A1Published application
Topological Insulator Based Spin Torque Oscillator Reader
AssigneeWestern Digital Technologies, Inc.
InventorsXiaoyong LIU, Zhanjie LI, Quang LE, Brian R. YORK, Cherngye HWANG, Kuok San HO, Hisashi TAKANO
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Abstract
The present disclosure generally relates to a bismuth antimony (BiSb) based STO (spin torque oscillator) sensor. The STO sensor comprises a SOT device and a magnetic tunnel junction (MTJ) structure. By utilizing a BiSb layer within the SOT device, a larger spin Hall angle (SHA) can be achieved, thereby improving the efficiency and reliability of the STO sensor.
Claims20
A method of using a magnetic recording head, comprising:
- flowing a current through a spin orbit torque (SOT) device of a spin torque oscillator (STO) sensor while reading data from a magnetic recording media;
- and
- measuring frequency of a precession of a free layer in the STO sensor, wherein the precession is responsive to a magnetic field generated by the magnetic recording media.
A magnetic recording head, comprising:
- a sensor, comprising:
- an antiferromagnetic (AFM) layer disposed at a media facing surface (MFS);
- a magnetic tunnel junction (MTJ) structure comprising a free layer;
- and
- a spin orbit torque (SOT) device comprising a bismuth antimony (BiSb) layer;
- means for flowing a current through the SOT device while reading data from a magnetic recording media;
- and
- means for measuring frequency of a precession of the free layer, wherein the precession is responsive to a magnetic field generated by the magnetic recording media.
5 more elements
A magnetic recording head, comprising:
- a sensor, comprising:
- an antiferromagnetic (AFM) layer disposed at a media facing surface (MFS);
- a magnetic tunnel junction (MTJ) structure comprising:
- a free layer;
- a first pinning layer;
- a Ru layer;
- and
- a second pinning layer;
- and
- a spin orbit torque (SOT) device comprising:
- a first buffer layer;
- a bismuth antimony (BiSb) layer disposed on the first buffer layer;
- and
- a second buffer layer disposed on the BiSb layer;
- means for flowing a current through the SOT device while reading data from a magnetic recording media;
- and
- means for measuring frequency of a precession of the free layer, wherein the precession is responsive to a magnetic field generated by the magnetic recording media.
14 more elements
Dependencies are inferred from the claim text.