Additive for 193 nm dry photoresist and preparation method for and application of additive
AssigneesShanghai Sinyang Semiconductor Materials Co., Ltd., China Advanced Lithographic Material Technology Co., Ltd.
InventorsShunong FANG, Su WANG, Zhiyue GENG, Zhongyue CUI
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Abstract
An additive for 193 nm dry photoresist and a preparation method for and application of the additive. The structure of the additive is as shown in formula I, the weight-average molecular weight is 1000-3000, and the ratio of the weight-average molecular weight to the number-average molecular weight is 1-5. By using the additive, photoresist can form a photoresist film micropattern having excellent sensitivity and high resolution.
Claims15
An additive of formula I, wherein the additive has a weight-average molecular weight of 1000 to 3000;
- the ratio of the weight-average molecular weight to the number-average molecular weight of the additive is 1 to 5;
(canceled)
Dependencies are inferred from the claim text.