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US 2025/0011968 A1Published application
Methods for determining suitability of silicon substrates for epitaxy
AssigneeGlobalWafers Co., Ltd.
InventorsShan-Hui Lin, Chun-Chin Tu, Zheng Lu
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Abstract
Methods for determining suitability of a silicon substrate for epitaxy and/or for determining slip resistance during epitaxy and post-epitaxy thermal treatment are disclosed. The methods involve evaluating different substrates of the epitaxial wafers by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which substrates are well-suited for epitaxial and/or post-epi heat treatments.
Claims9
A method for determining suitability of a silicon substrate for epitaxy, the method comprising:
- loading a silicon substrate onto a susceptor disposed within a processing reactor;
- contacting a front surface of the silicon substrate with a silicon-containing gas, the silicon-containing gas decomposing to form an epitaxial silicon layer on the silicon substrate to form an epitaxial wafer;
- and
- imaging only an annular edge region of the epitaxial wafer by infrared depolarization to determine an infrared depolarization parameter.
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Dependencies are inferred from the claim text.