Electrostatic discharge circuitry for a high-voltage semiconductor device

A method, comprising:

• forming a plurality of shallow trench isolation (STI) regions in a substrate of a semiconductor device;
• forming, for a PNP electrostatic discharge (ESD) triggering device of the semiconductor device:
• an n-doped base in the substrate and between a first STI region and a second STI region of the plurality of STI regions;
• a p-doped collector in the substrate and between the second STI region and a third STI region of the plurality of STI regions,
• wherein a first portion of the substrate is located between a first n-doped well of the n-doped base and a p-doped well of the p-doped collector, and
• a p-doped emitter in the substrate and between the third STI region and a fourth STI region of the plurality of STI regions,
• wherein a second portion of the substrate is located between the p-doped well of the p-doped collector and a second n-doped well of the p-doped emitter;
• forming a first field plate structure on the second STI region;
• and
• forming a second field plate structure on the third STI region.

A semiconductor device, comprising:

• a device circuit;
• an electrostatic discharge (ESD) circuit coupled with the device circuit;
• and
• an ESD triggering circuit, coupled with the ESD circuit and the device circuit, comprising:
• a substrate;
• and
• a PNP ESD triggering device, in the substrate, comprising:
• an n-doped base including a first plurality of fin-shaped structures;
• a p-doped emitter including a second plurality of fin-shaped structures,
• wherein a first portion of the substrate is located between a first n-doped well of the n-doped base and a p-doped well of the p-doped emitter;
• and
• a p-doped collector including a third plurality of fin-shaped structures,
• wherein a second portion of the substrate is located between the p-doped well of the p-doped emitter and a second n-doped well of the p-doped collector.