Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsChien-Ting Lin, Kai-Kuang Ho, Chuan-Lan Lin, Yu-Ping Wang, Chu-Fu Lin, Yi-Feng Hsu, Yu-Jie Lin
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Abstract
A method for fabricating a semiconductor device includes the steps of first defining a scribe line on a front side of a wafer, in which the wafer includes an inter-metal dielectric (IMD) layer disposed on a substrate and an alternating stack disposed on the IMD layer. Next, part of the alternating stack is removed to form a trench on the front side of the wafer, a dielectric layer is formed in the trench, and then a dicing process is performed along the scribe line from a back side of the wafer to divide the wafer into chips.
Claims12
A method for fabricating a semiconductor device, comprising:
- defining a scribe line on a front side of a wafer;
- forming a trench on the front side of the wafer;
- forming a dielectric layer in the trench;
- and
- performing a dicing process along the scribe line from a back side of the wafer.
A semiconductor device, comprising:
- a chip obtained after a dicing process, wherein the chip comprises:
- an alternating stack on a substrate;
- and
- a dielectric layer on a sidewall of the alternating stack.
Dependencies are inferred from the claim text.