Piezoelectric epitaxially grown pseudosubstrate, use and process for preparing such a pseudosubstrate

Abstract

The present invention relates to a piezoelectric, epitaxially grown pseudosubstrate comprising a silicon wafer (100) having two parallel faces, and a thin layer of α-quartz (100) grown epitaxially on one of the faces of said wafer, said thin α-quartz layer (100) exhibiting a uniform crystallization with a mosaicity around the peak (100) of the quartz of between 6° and 1° and a thickness of between 100 nm and 1 μm. The present invention also relates to a process for fabricating such a pseudosubstrate, and to the use thereof for producing piezoelectric membranes.

Dependencies are inferred from the claim text.