Method of forming epitaxial semiconductor layer and method of manufacturing semiconductor device using the same

A method for manufacturing a semiconductor device comprising:

• a step for providing a crystallization base member having a single crystal structure;
• a step for forming a mask layer on the crystallization base member having at least one opening exposing a portion of the crystallization base member;
• a step for forming a semiconductor layer having any one of an amorphous structure and a polycrystalline structure to fill the opening on the crystallization base member exposed by the opening;
• a step for forming a heating layer which may be heated by a laser on the semiconductor layer;
• a step for melting the semiconductor layer by heating the heating layer by irradiating a laser to the heating layer;
• a step for forming a single crystallized epitaxial semiconductor layer from the semiconductor layer through single crystallization of the semiconductor layer according to the single crystalline structure of the crystallization base member by cooling the molten semiconductor layer;
• and
• a step for forming a semiconductor device including the epitaxial semiconductor layer.

A method for manufacturing a semiconductor device comprising:

• a step for preparing a substrate structure in which a crystallization base member having a single crystalline structure is formed on an underlying layer, wherein the crystallization base member is formed in a patterned layer structure having at least one opening exposing a portion of the underlying layer;
• a step for forming a semiconductor layer having any one of an amorphous structure and a polycrystalline structure to fill the opening on the underlying layer exposed by the opening;
• a step for forming a heating layer which may be heated by a laser on the semiconductor layer;
• a step for melting the semiconductor layer by heating the heating layer by irradiating a laser to the heating layer;
• a step for forming a single crystallized epitaxial semiconductor layer from the semiconductor layer through single crystallization of the semiconductor layer according to the single crystalline structure of the crystallization base member by cooling the molten semiconductor layer;
• and
• a step for forming a semiconductor device including the epitaxial semiconductor layer.