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US 2024/0412972 A1Published application
Method for wafer treatment
AssigneeHua Hsu Silicon Materials Co., Ltd.
InventorsChiao-Yang Cheng, Hsiang-Yi Liu, Thi-Yen Thu Le
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Abstract
A method for a wafer treatment includes providing a wafer including a main surface, a surface layer and a base layer; and performing at least one laser process to irradiate the whole surface layer with laser to thereby generate a plurality of defect regions in the surface layer, and the defect regions form at least one array of defect regions.
Claims11
A method for a wafer treatment, comprising:
- providing a wafer, wherein the wafer comprises a main surface, a surface layer and a base layer, wherein the surface layer is located between the main surface and the base layer;
- and
- performing at least one laser process to irradiate the surface layer with laser, thereby generating a plurality of defect regions in the surface layer, and the defect regions form at least one array of defect regions.
Dependencies are inferred from the claim text.