Photolithography method and method of manufacturing semiconductor device using the same

A method of manufacturing a semiconductor device, the method comprising:

• forming a photoresist pattern on a substrate;
• heating the substrate;
• conformally forming a liner layer on the substrate and the photoresist pattern;
• etching back the liner layer and the photoresist pattern to remove a portion of the liner layer and a portion of the photoresist pattern;
• performing a patterning process using the liner layer and the photoresist pattern as a mask;
• and
• removing the liner layer and the photoresist pattern by performing an etching process,
• wherein the forming of the liner layer includes a deposition process of reacting an initiator and a monomer with each other,
• wherein the monomer includes multiple bonds between carbon atoms,
• wherein the initiator includes a material that forms a radical by thermal decomposition,
• wherein a copolymer is formed by an initiating reaction between the radical and the monomer, and
• wherein the liner layer includes the copolymer.

A method of manufacturing a semiconductor device, the method comprising:

• forming a stacked pattern on a substrate, the stacked pattern including active layers and sacrificial layers alternately stacked with each other;
• forming a mask pattern on the substrate;
• heating the substrate to form a liner layer covering the substrate and the mask pattern;
• etching back the liner layer and the mask pattern to remove a portion of the liner layer and a portion of the mask pattern;
• performing a patterning process using the liner layer and the mask pattern as a mask to form a trench in the substrate, the trench defining an active pattern;
• and
• removing the liner layer and the mask pattern,
• wherein the forming of the liner layer includes a deposition process of reacting an initiator and a monomer with each other,
• wherein the monomer includes multiple bonds between carbon atoms,
• wherein the initiator includes a material that forms a radical by thermal decomposition,
• wherein a copolymer is formed by an initiating reaction between the radical and the monomer, and
• wherein the liner layer includes the copolymer.