Semiconductor film, photodetection element, image sensor, and manufacturing method for semiconductor quantum dot
AssigneeFUJIFILM Corporation
InventorsMasashi ONO, Masahiro TAKATA
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Abstract
There is provided a semiconductor film containing an aggregate of semiconductor quantum dots that contain an In element and a Group 15 element and a ligand that is coordinated to the semiconductor quantum dot, in which the Group 15 element includes an Sb element, and a ratio of the number of the In elements to the number of the Group 15 elements in the semiconductor quantum dot is 1.1 or more. There are also provided a photodetection element, an image sensor, and a manufacturing method for a semiconductor quantum dot.
Claims10
A semiconductor film comprising:
- an aggregate of semiconductor quantum dots that contain an In element and a Group 15 element;
- and
- a ligand that is coordinated to the semiconductor quantum dot,
- wherein the Group 15 element includes an Sb element, and
- a ratio of the number of the In elements to the number of the Group 15 elements in the semiconductor quantum dot is 1.1 or more.
A manufacturing method for a semiconductor quantum dot, the semiconductor quantum dot containing an In element and a Group 15 element, where the Group 15 element includes an Sb element, and a ratio of the number of the In elements to the number of the Group 15 elements in the semiconductor quantum dot is 1.1 or more, the manufacturing method for a quantum dot film, comprising:
- a step of heating, at 290° C. or lower for 16 minutes or more, a precursor solution that contains a compound A containing an In element and a compound B containing an Sb element, where a molar ratio of the In element to the Sb element is 2.1 or more.
Dependencies are inferred from the claim text.