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US 2024/0409430 A1Published application
Hafnium precursors and related methods
AssigneeEntegris, Inc.
InventorsJuan Valdez, Michael Watson, Scott L. Battle, Matthew W. Calhoun, Benjamin R. Garrett, Wesley W. Goggans
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Abstract
A precursor vessel comprises a hafnium halide precursor. The hafnium halide precursor comprises less than 1 ppm of at least one impurity. The at least one impurity comprises at least one of a titanium contaminant, a chromium contaminant, an aluminum contaminant, an iron contaminant, or any combination thereof. Related systems and related methods are also provided, including, for example and without limitation, systems for delivery of vapor precursors, methods for purifying a precursor, and the like.
Claims20
A system comprising:
- a precursor vessel comprising a solid HfCl4 precursor,
- wherein the solid HfCl4 precursor comprises less than 1 ppm of a titanium contaminant.
A method comprising:
- obtaining a first vessel comprising a solid reagent, the solid reagent comprising HfCl4 and at least one impurity;
- vaporizing at least a portion of the solid reagent to produce a first vapor comprising at least one of a HfCl4 vapor, at least one impurity vapor, or any combination thereof;
- flowing at least a portion of the HfCl4 vapor and at least a portion of the impurity vapor to a second vessel;
- condensing at least a portion of the HfCl4 vapor in the second vessel to separate the HfCl4 from the impurity vapor;
- and
- removing at least a portion of the impurity vapor from the second vessel to obtain a HfCl4 precursor.
3 more elements
Dependencies are inferred from the claim text.