Thin Film Anisotropic Magnetoresistor Device and Formation

An apparatus comprising:

• an integrated circuit device comprising a plurality of metallization layers for interconnecting underlying electronic devices;
• a plurality of contacts formed on corresponding conductors of an uppermost one of the metallization layers;
• a planarized first dielectric layer covering the contacts and the uppermost one of the metallization layers;
• an anisotropic magnetoresistive (AMR) stack formed on the first dielectric layer between vertically aligned portions of:
• an etch stop layer formed on the first dielectric layer;
• and
• a second dielectric layer formed on the etch stop layer;
• a plurality of vias each extending through the first dielectric layer to electrically connect the AMR stack and two of the contacts;
• a chemical-mechanical planarization (CMP) stop layer formed on the AMR stack;
• a third dielectric layer formed on the CMP stop layer;
• and
• a passivation (PO) layer contacting the second dielectric layer portions, the third dielectric layer, and each opposing end of the AMR stack and the CMP stop layer.

A method of forming an electronic device, comprising:

• forming a trench in a first dielectric layer over a semiconductor substrate;
• forming an anisotropic magnetoresistive (AMR) stack on sidewalls and a bottom of the trench, the AMR stack including a portion overlying the substrate lateral to the trench;
• forming a second dielectric layer within the trench, the second dielectric layer overlying the substrate lateral to the trench;
• removing the portion of the second dielectric layer overlying the substrate lateral to the trench;
• and
• removing the portion of the AMR stack overlying the substrate lateral to the trench.