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US 2024/0407176 A1Published application
Magnetization rotation element, magnetoresistance effect element and magnetic memory
AssigneeTDK Corporation
InventorsYohei SHIOKAWA, Yugo ISHITANI, Kosuke HAMANAKA
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Abstract
A magnetization rotation element includes a spin-orbit torque wiring and a first ferromagnetic layer connected to the spin-orbit torque wiring, wherein the spin-orbit torque wiring has a first layer and a second layer, the first layer is closer to the first ferromagnetic layer than the second layer, the first layer has a negative spin Hall angle, and the second layer has a positive spin Hall angle.
Claims15
A magnetization rotation element comprising
- a spin-orbit torque wiring;
- and
- a first ferromagnetic layer connected to the spin-orbit torque wiring,
- wherein the spin-orbit torque wiring has a first layer and a second layer,
- wherein the first layer is closer to the first ferromagnetic layer than the second layer,
- wherein the first layer has a negative spin Hall angle,
- wherein the second layer has a positive spin Hall angle, and
- wherein at least one of the first layer and the second layer is nitride.
5 more elements
A magnetization rotation element comprising
- a spin-orbit torque wiring;
- and
- a first ferromagnetic layer connected to the spin-orbit torque wiring,
- wherein the spin-orbit torque wiring has a first layer and a second layer,
- wherein the first layer is closer to the first ferromagnetic layer than the second layer,
- wherein the first layer has a negative spin Hall angle,
- wherein the second layer has a positive spin Hall angle,
- wherein at least one of the first layer and the second layer contains oxygen, and
- wherein the content of oxygen in at least one of the first layer and the second layer is 30 atm % or more and 50 atm % or less.
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A magnetization rotation element comprising
- a spin-orbit torque wiring;
- and
- a first ferromagnetic layer connected to the spin-orbit torque wiring,
- wherein the spin-orbit torque wiring has a first layer and a second layer,
- wherein the first layer is closer to the first ferromagnetic layer than the second layer,
- wherein the first layer has a negative spin Hall angle,
- wherein the second layer has a positive spin Hall angle,
- wherein at least one of the first layer and the second layer contains nitrogen or carbon, and
- wherein the content of nitrogen or carbon in at least one of the first layer and the second layer is 50 atm % or less.
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Dependencies are inferred from the claim text.