Three-dimensional memory devices including self-aligned source-channel junctions and methods for forming the same
AssigneeWestern Digital Technologies, Inc.
InventorsKento ISERI, Takaaki IWAI, Naoto NORIZUKI
Life of this patent
Estimating the term…
Abstract
A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, a memory opening fill structure located in the memory opening and including a memory film, a vertical semiconductor channel, and a semiconductor source cap structure which is at least partially laterally surrounded by the memory film and which contacts the vertical semiconductor channel, and a source layer contacting at least a first end surface segment of the semiconductor source cap structure.
Claims20
A semiconductor structure, comprising:
- an alternating stack of insulating layers and electrically conductive layers;
- a memory opening vertically extending through the alternating stack;
- a memory opening fill structure located in the memory opening and comprising a memory film, a vertical semiconductor channel, and a semiconductor source cap structure which is at least partially laterally surrounded by the memory film and which contacts the vertical semiconductor channel;
- and
- a source layer contacting at least a first end surface segment of the semiconductor source cap structure.
A method of forming a semiconductor structure, comprising:
- forming a source-side spacer layer over a carrier substrate;
- forming an alternating stack of insulating layers and spacer material layers over the source-side spacer layer, wherein the spacer material layers are formed as or are subsequently replaced with electrically conductive layers;
- forming a memory opening through the alternating stack and the source-side spacer layer;
- forming a memory film at a peripheral portion of the memory opening;
- forming a semiconductor source cap structure at a bottom portion of the memory film;
- forming a vertical semiconductor channel on a top surface of the semiconductor source cap structure and on an inner sidewall of the memory film;
- removing the carrier substrate;
- and
- forming a source layer on an exposed bottom surface segment of the semiconductor source cap structure.
Dependencies are inferred from the claim text.