Semiconductor device and manufacturing method of semiconductor device
AssigneeSK hynix Inc.
InventorYun Cheol HAN
Life of this patent
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Abstract
A semiconductor device may include: a first gate structure; a second gate structure; an isolation insulation structure configured to extend in a first direction between the first gate structure and the second gate structure, and to have a first width in a second direction intersecting the first direction; and a first support located between the first gate structure and the second gate structure, and configured to have a second width greater than the first width in the second direction. The isolation insulation structure may protrude into the first support.
Claims37
A semiconductor device comprising:
- a first gate structure;
- a second gate structure;
- an isolation insulation structure configured to extend in a first direction between the first gate structure and the second gate structure, and to have a first width in a second direction intersecting the first direction;
- and
- a first support located between the first gate structure and the second gate structure, and configured to have a second width greater than the first width in the second direction,
- wherein the isolation insulation structure protrudes into the first support.
A manufacturing method of a semiconductor device, the manufacturing method comprising:
- forming a stack including first material layers and second material layers that are alternately stacked;
- forming first openings in the stack;
- forming a second opening located between the first openings, and the second opening having a greater size than the first openings;
- forming a support in the second opening;
- forming third openings that connect the first openings to each other between the first material layers and that expose the support by etching the second material layers through the first openings;
- and
- replacing the first material layers with third material layers through the third openings.
A manufacturing method of a semiconductor device, the manufacturing method comprising:
- forming a stack including first material layers and second material layers that are alternately stacked;
- forming first openings in the stack;
- forming a second opening having a greater size than the first openings by selectively expanding at least one of the first openings;
- forming a support in the second opening;
- forming third openings that connect the first openings to each other and that expose the support by etching the second material layers through the first openings;
- and
- forming a recess on a sidewall of the support exposed through the third openings.
Dependencies are inferred from the claim text.