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US 2024/0407162 A1Published application
Semiconductor memory device including a substrate, various interconnections, semiconductor member, charge storage member and a conductive member
AssigneeKioxia Corporation
InventorYoshiro SHIMOJO
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Abstract
According to one embodiment, a semiconductor memory device includes: a substrate; a first interconnect; a second interconnect; a plurality of third interconnects; a fourth interconnect; a semiconductor member; a charge storage member; and a conductive member. One of the plurality of third interconnects is disposed on two second-direction sides of the conductive member. Portions of the one of the plurality of third interconnects disposed on the two second-direction sides of the conductive member are formed as one body.
Claims1
A semiconductor memory device, comprising:
- a substrate;
- an integrated circuit provided above the substrate, the integrated circuit including a first interconnect;
- a stacked body provided above the integrated circuit, the stacked body including electrode films, semiconductor pillars, and memory films;
- a through-via piercing the stacked body and connected to the first interconnect;
- and
- a second interconnect provided above the stacked body and connected to the through-via.
3 more elements
Dependencies are inferred from the claim text.