Semiconductor device

A semiconductor device comprising:

• a substrate including a first active region and a second active region;
• an element isolation film on the substrate, the element isolation film exposing the first active region and the second active region;
• a silicon germanium film on the first active region of the substrate;
• a first gate insulating film on the silicon germanium film;
• a first gate electrode on the first gate insulating film;
• a second gate insulating film on the second active region of the substrate;
• and
• a second gate electrode on the second gate insulating film, wherein
• a lower face of the silicon germanium film faces the substrate and an upper face of the silicon germanium film faces the first gate insulating film, and
• a height from a lowest portion of the element isolation film to an upper face of the silicon germanium film in the first active region is equal to a height from a lowest portion of the element isolation film to an upper face of the substrate in the second active region.

A semiconductor device comprising:

• a substrate including a first active region and a second active region;
• an element isolation film on the substrate, the element isolation film exposing the first active region and the second active region;
• a silicon germanium film on the first active region of the substrate, the silicon germanium film contacting the substrate;
• a first gate insulating film on the silicon germanium film;
• a first gate electrode on the first gate insulating film;
• a second gate insulating film on the second active region of the substrate;
• and
• a second gate electrode on the second gate insulating film, wherein
• a lower face of the silicon germanium film faces the substrate and an upper face of the silicon germanium film faces the first gate insulating film,
• a first height in the first active region is from a level of an upper face of the element isolation film to a level of the upper face of the silicon germanium film,
• a second height in the second active region is from the level of the upper face of the element isolation film to a level of the upper face of the substrate, and
• the first height equals the second height.