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US 2024/0405509 A1Published application
Semiconductor device
AssigneeEpistar Corporation
InventorShih-Chun LING
Life of this patent
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Abstract
A semiconductor device includes a substrate, an epitaxial structure and a first interlayer. The substrate has an upper surface and a bottom surface. The epitaxial structure is on the upper surface and includes an active structure. The first interlayer is on the bottom surface and includes M1x1Ny1. M1 is metal and N is nitrogen, and x1>y1.
Claims20
A semiconductor device, comprising:
- a substrate comprising an upper surface and a bottom surface;
- an epitaxial stack on the upper surface and comprising an active structure;
- and
- a first interlayer at the bottom surface and comprising M1x1Ny1;
- wherein M1 is metal and N is nitrogen, and x1>y1.
2 more elements
A semiconductor device, comprising:
- a substrate comprising an upper surface and a bottom surface;
- an epitaxial stack on the upper surface and comprising an active structure;
- a lower electrode structure on the bottom surface;
- and
- a first interlayer between the epitaxial stack and the lower electrode structure;
- wherein the first interlayer comprises a width larger than a width of the lower electrode structure.
3 more elements
Dependencies are inferred from the claim text.