Method of manufacturing edge emitting lasers by cleaving a semiconductor wafer along one or more streets formed on the wafer

A method for manufacturing edge-emitting lasers, the method comprising:

• providing a semiconductor wafer including a plurality of semiconductor layers forming at least one laser cavity, at least one dielectric layer on the semiconductor layers, and at least one metal layer on the dielectric layer, wherein at least one street is formed on the semiconductor wafer without the metal layer and without the dielectric layer;
• cleaving the semiconductor wafer along the at least one street to form a plurality of edge-emitting lasers having cleaved facets on each side of the at least one laser cavity, wherein at least one of the cleaved facets provides an output facet for emitting light from the at least one laser cavity;
• and
• depositing a dielectric material on a remaining portion of the streets along ends of the cleaved facets.