Rgb micro-light-emitting diode having vertically-stacked structure with corner mesa contact structures and manufacturing method thereof

A method of manufacturing an RGB micro-light-emitting diode, comprising the steps of;

• forming a first contact hole to form a first corner mesa contact structure on a vertically-stacked structure;
• forming a second contact hole to form a second corner mesa contact structure in a first direction with respect to the first contact hole;
• forming a third contact hole to form a third corner mesa contact structure in a second direction with respect to the second contact hole;
• forming a fourth contact hole to form a first contact structure in a third direction with respect to the first contact hole;
• forming a fifth contact hole to form a second contact structure in the first direction with respect to the first contact hole and in a direction which is diagonal with respect to the second contact hole;
• forming a vertically-stacked structure including the corner mesa contact structures by etching the vertically-stacked structure, which includes the first contact hole at the first corner, the second contact hole at the second corner, the third contact hole at the third corner, and no contact hole at the fourth corner, into a rectangular shape to form a pixel mesa structure, down to the surface of the third n-type contact electrode layer;
• depositing a passivation layer on the surface of the vertically-stacked structure including the corner mesa contact structures;
• etching the passivation layer for electrode connection of the vertically-stacked structure;
• and
• forming a metal contact to connect to the top of the vertically-stacked structure.

A method of manufacturing an RGB micro-light-emitting diode, comprising the steps of;

• forming a vertically-stacked structure including a pixel mesa structure by etching the vertically-stacked structure down to the top of a third n-type contact electrode layer;
• depositing a protective layer including the pixel mesa structure on the third n-type semiconductor layer of the vertically-stacked structure including the pixel mesa structure;
• removing a portion of the protective layer by performing chemical mechanical polishing (CMP) down to the top of a third p-type semiconductor layer to planarize the top of the protective layer and the pixel mesa structure;
• forming a first contact hole to form a first corner mesa contact structure at a first corner of the pixel mesa structure;
• forming a second contact hole to form a second corner mesa contact structure at a second corner of the pixel mesa structure in a first direction with respect to the first contact hole;
• forming a third contact hole to form a third corner mesa contact structure at a third corner of the pixel mesa structure in a second direction with respect to the second contact hole;
• forming a vertically-stacked structure including the first to third corner mesa contact structures by removing the remaining protective layer on the vertically-stacked structure;
• forming a fourth contact hole to form a first contact structure in a third direction with respect to the first corner mesa contact structure on the third n-type semiconductor layer of the vertically-stacked structure;
• forming a fifth contact hole to form a second contact structure spaced away from the fifth contact hole on the third n-type semiconductor layer of the vertically-stacked structure and in the same direction as the first corner mesa contact structure and the second corner mesa contact structure;
• depositing a passivation layer on the surface of the vertically-stacked structure including the contact holes and the corner mesa contact structures;
• etching the passivation layer for electrode connection of the vertically-stacked structure on which the passivation layer is deposited;
• and
• forming a metal contact to connect to the top of the etched vertically-stacked structure.