US 2024/0405147 A1 · OPTICALLY CONTROLLED SEMICONDUCTOR DEVICES

Abstract

Described herein is a semiconductor structure, comprising: a drain region; a drift region comprised of a wide band gap material disposed over the drain region; and a channel structure disposed over the drift region. In some embodiments, the channel structure comprises: an optically active material disposed over the drift region, wherein the optically active material generates charge carriers in response to an optical signal; and a source region disposed over the optically active material, wherein in an off state charge carriers in the optically active material are depleted to turn off the semiconductor structure, and in an on state charge carriers in the optically active material conduct a current in the semiconductor structure when an electric field is applied across the source region and drain region, causing the current to substantially flow directly between the source region and the drain region.

Claims20

Dependent claims

A semiconductor structure, comprising:

a drain region;
a drift region comprised of a wide band gap material disposed over the drain region;
and
an optically active material disposed over the drift region to form a channel structure, the optically active material to generate charge carriers in response to an optical signal incident thereon;
and
a source region disposed over the optically active material such that without an optical signal incident on the optically active material, charge carriers in the optically active material are depleted to turn off the semiconductor structure, and with an optical signal incident on the optically active material, charge carriers in the optically active material conduct a current in the semiconductor structure when an electric field is applied across the source region and drain region, causing the current to substantially flow directly between the source region and the drain region.

3 more elements

A semiconductor structure, comprising:

a drift region comprised of a wide band gap material;
a barrier region disposed over the drift region;
one or more channels at an interface of the barrier region and the drift region;
a source contact disposed on a first surface of the barrier region to form a source region in electrical communication with at least some of the one or more channels;
a drain contact disposed on the first surface of the barrier region to form a drain region in electrical communication with at least some of the one or more channels and adjacent to the source region;
and
an optically active material disposed over the first surface of the barrier region between the source contact and the drain contact, wherein the optically active material generates charge carriers in response to an optical signal, wherein in an off state charge carriers in the channels are depleted to turn off the semiconductor structure, and in an on state charge carriers in the channels conduct a current in the semiconductor structure when an electric field is applied across the source region and the drain region, causing current to substantially flow through at least some of the one or more channels directly between the source region and the drain region.

4 more elements

Dependencies are inferred from the claim text.

Optically controlled semiconductor devices

Life of this patent

Optically controlled semiconductor devices

Life of this patent

Abstract

Claims20