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US 2024/0405146 A1Published application
Spad photodiode
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorsAntonin ZIMMER, Dominique GOLANSKI, Raul Andres BIANCHI
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Abstract
A photodiode is formed in a semiconductor substrate of a first conductivity type. The photodiode includes a first region having a substantially hemispherical shape and a substantially hemispherical core of a second conductivity type, different from the first conductivity type, within the first region. An epitaxial layer covers the semiconductor substrate and buries the first region and core.
Claims21
A photodiode, comprising:
- a semiconductor substrate of a first conductivity type;
- an epitaxial layer covering a top face of the semiconductor substrate;
- a substantially hemispherical buried region of the first conductivity type in the semiconductor substrate, said substantially hemispherical buried first region having a top face coplanar with said top face of the semiconductor substrate;
- a substantially hemispherical core of a second conductivity type, different from the first conductivity type, contained within the substantially hemispherical buried first region, said substantially hemispherical core having a top face coplanar with said top face of the semiconductor substrate;
- and
- a further region of the second conductivity type aligned with the substantially hemispherical core and extending through the epitaxial region with a top face coplanar with a top face of epitaxial layer.
3 more elements
A photodiode, comprising:
- a semiconductor substrate of a first conductivity type;
- an epitaxial layer covering a top face of the semiconductor substrate;
- a peripheral insulating trench extending into the epitaxial layer and the semiconductor substrate to define a well;
- and
- at a center of the well:
- a first substantially hemispherical region doped with first conductivity type, said first substantially hemispherical region located in the semiconductor substrate;
- a second substantially hemispherical region doped with a second conductivity type, different from the first conductivity type, said second substantially hemispherical region contained within the first substantially hemispherical region;
- and
- a further region doped with the second conductivity type, said further region located within the epitaxial layer and aligned with the second substantially hemispherical region.
6 more elements
Dependencies are inferred from the claim text.