Semiconductor light receiving device

Abstract

A semiconductor light receiving device (1) has a light receiving portion (6) with a light absorbing layer (4) on a first surface (2a) side of a semiconductor substrate (2) transparent to incident light in an infrared range for optical communications, a reflecting portion (11) in a region where light that was incident on the light receiving portion (6) and passed through the light absorbing layer (4) is reached on a second surface (2b) side opposite the first surface (2a) to reflect the light toward the second surface (2b), and end surfaces (2c, 2d) of the semiconductor substrate (2), where light reflected by the reflecting portion (11) and reflected by the second surface (2b) reaches, are formed as a rough surface having roughness with a height equal to or greater than the wavelength of the incident light.

Dependencies are inferred from the claim text.