Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsBo-Huan HSIN, Ying-Han CHIOU, Ming-Yen TSAI
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Abstract
A semiconductor device and a manufacturing method of the semiconductor device are provided. The semiconductor device includes a source region, a drain region, a channel region and a plurality of fins. The channel region is located between the source region and the drain region, and the fins pass through the source region, the drain region and the channel region, wherein a number of the fins located in the source region and the drain region and a number of the fins located in the channel region are not equal.
Claims20
A semiconductor device comprising:
- a source region;
- a drain region;
- a channel region located between the source region and the drain region;
- and
- a plurality of fins passing through the source region, the drain region and the channel region, wherein a number of the fins in the source region and the drain region and a number of the fins in the channel region are not equal.
A semiconductor device comprising:
- a source region;
- a drain region;
- a channel region located between the source region and the drain region;
- and
- a plurality of fins pass through the source region, the drain region and the channel region, wherein heights of the fins located in the channel region are not equal.
A manufacturing method of a semiconductor device, the semiconductor device comprising a substrate, a plurality of fins extending upward from the substrate, and a gate structure covering the fins, the method manufacturing of the semiconductor device comprising:
- forming a photoresist layer on the gate structure, developing and removing a part of the photoresist layer, so that the photoresist layer is patterned to form an opening corresponding to a top location of a first fin to be removed among the fins;
- etching the first fin and the gate structure covering the first fin to form a recessed region in the gate structure;
- and
- filling an insulating material into the recessed region.
Dependencies are inferred from the claim text.