Semiconductor device

Abstract

A semiconductor device including an active portion is provided, the semiconductor device comprising: a drift region of a first conductivity type provided in the semiconductor substrate; a base region of a second conductivity type provided above the drift region; a gate pad provided above the semiconductor substrate; an emitter electrode provided above the semiconductor substrate; a gate trench portion provided on a front surface of the semiconductor substrate in the active portion; and a gate wiring portion for connecting the gate pad and the gate trench portion; wherein the gate wiring portion has: a first gate trench wiring portion which extends in a predetermined direction; and a second gate trench wiring portion which extends in a different direction from the first gate trench wiring portion and intersects the first gate trench wiring portion at an intersection portion; and the emitter electrode is provided above the intersection portion.

Dependencies are inferred from the claim text.