Nitride semiconductor device
AssigneeRohm Co., Ltd.
InventorHirotaka OTAKE
Life of this patent
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Abstract
A nitride semiconductor device includes an electron transit layer, an electron supply layer, a gate layer containing acceptor impurities, a gate electrode, a passivation layer, a source electrode, a drain electrode, and a field plate electrode. The field plate electrode is located on the passivation layer between the gate layer and the drain electrode. The gate layer includes a ridge where the gate electrode is located, a source-side extension extending from the ridge, and a drain-side extension extending from the ridge to a side opposite to the source-side extension. The passivation layer includes a field plate non-overlapping region that does not overlap the field plate electrode and is located immediately above the drain-side extension.
Claims20
A nitride semiconductor device, comprising:
- an electron transit layer composed of a nitride semiconductor;
- an electron supply layer located on the electron transit layer and composed of a nitride semiconductor having a band gap that is larger than that of the electron transit layer;
- a gate layer located on part of the electron supply layer and composed of a nitride semiconductor containing acceptor impurities;
- a gate electrode located on the gate layer;
- a passivation layer covering the electron supply layer, the gate layer, and the gate electrode and including a first opening and a second opening;
- a source electrode contacting the electron supply layer through the first opening;
- a drain electrode contacting the electron supply layer through the second opening;
- and
- a field plate electrode located on the passivation layer between the gate layer and the drain electrode, wherein
- the gate layer includes
- a ridge where the gate electrode is located,
- a source-side extension extending from the ridge toward the first opening, and
- a drain-side extension extending from the ridge toward the second opening, and
- the passivation layer includes a field plate non-overlapping region that does not overlap the field plate electrode and is located immediately above the drain-side extension.
Dependencies are inferred from the claim text.