Semiconductor device

A semiconductor device comprising:

• a well area in an entirety of the substrate, wherein the well area has a first conductivity-type;
• one or more impurity-implanted areas in the well area, wherein the one or more impurity-implanted areas has a second conductivity-type different from the first conductivity-type;
• a first fin structure on at least one of the one or more impurity-implanted areas, wherein the first fin structure has the second conductivity-type;
• and
• an epitaxial pattern on the well area, wherein the epitaxial pattern has the first conductivity-type.

A semiconductor device comprising:

• a well area in a substrate and having a first conductivity-type;
• one or more impurity-implanted areas in the well area, having a second conductivity-type different from the first conductivity-type, wherein the one or more impurity-implanted areas are arranged in a first direction;
• a first contact on the one or more impurity-implanted area;
• a second contact on the well area;
• a first-first metal line electrically connected to the first contact and extending in a second direction intersecting the first direction;
• a first-second metal line electrically connected to the second contact and extending in the second direction;
• a second-first metal line electrically connected to the first-first metal line and extending in the first direction;
• and
• a second-second metal line electrically connected to the first-second metal line and extending in the first direction.