Method for producing a semiconductor device comprising a side gate
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsHamza SAHIN, Benoît BERTRAND, Heimanu NIEBOJEWSKI
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Abstract
A method for producing a lateral gate for a semiconductive device, comprising: etching of trenches depositing an electrode laver on the flank of the trenches, and a dielectric material filling. Advantageously, the lateral gate electrostatically controls a distribution of the charge carriers in a metal-oxide-semiconductor (MOS)-type structure, in particular for spin qubit applications.
Claims17
A semiconductive device comprising successively, stacked along a direction z,
- a support layer,
- an insulating layer, and
- a semiconductive layer wherein an active zone is defined,
- wherein the device further comprises a first lateral gate on a first edge of the active zone, configured to electrostatically control a distribution of charge carriers in the semiconductive layer perpendicularly to the direction z, and a vertical gate above the active zone, configured to electrostatically control the distribution of charge carriers in the semiconductive layer in the direction z,
- the device further comprises a second lateral gate on a second edge of the active zone, configured to electrostatically control a distribution of charge carriers in the semiconductive layer perpendicularly to the direction z, said second lateral gate being electrically insulated with respect to the first lateral gate, and
- the vertical gate is electrically insulated with respect to the first and second lateral gates, and the device further comprising a dielectric material encapsulating said first and second lateral gates.
A method for producing a device comprising a metal-oxide-semiconductor-type structure formed from a stack successively comprising, in a direction z, a support layer, an insulating layer, and a semiconductive layer, the device further comprising at least one lateral gate configured to electrostatically control a distribution of charge carriers in the semiconductive layer perpendicularly to the direction z, said method comprising:
- forming at least one trench passing through the semiconductive layer and extending up to into the insulating layer, said trench formation thus defining an active zone of the semiconductive layer, and exposing edges of said active zone,
- forming a first dielectric barrier on each exposed edge of the active zone, said first dielectric barrier partially forming a flank of said at least one trench,
- depositing an electrode layer on the flank of the at least one trench, and on a bottom of the at least one trench, said electrode layer having at least one lateral portion on the flank of the at least one trench, said lateral portion forming the lateral gate, and a basal portion on the bottom of the at least one trench,
- filling the at least one trench with a dielectric material,
- forming a second dielectric barrier on an upper face of the active zone and on an upper end of the lateral gate bordering the active zone, and
- forming a vertical gate on the second dielectric barrier, above the active zone, configured to electrostatically control the distribution of charge carriers in the semiconductive layer in the direction z, so as to obtain the metal-oxide-semiconductor-type structure.
Dependencies are inferred from the claim text.