Fin jog structure and methods of making same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Hao Wu, C.C. Chien
Life of this patent
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Abstract
A method includes providing a workpiece. The workpiece includes a substrate, a fin protruding from the substrate, and a dummy gate structure over the fin. The method further includes performing an oxidizing process to exposed surfaces of the fin and the dummy gate structure to form an oxide layer thereon, removing the oxide layer to expose an unoxidized top surface and sidewalls of the fin and unoxidized sidewalls of the dummy gate structure, epitaxially growing a cap layer on the unoxidized top surface and sidewalls of the fin and the unoxidized sidewalls of the dummy gate structure, forming a source/drain feature on the fin, and replacing the dummy gate structure with a metal gate structure.
Claims20
A method, comprising:
- providing a workpiece including:
- a substrate,
- a fin protruding from the substrate, and
- a dummy gate structure over the fin;
- performing an oxidizing process to exposed surfaces of the fin and the dummy gate structure to form an oxide layer thereon;
- removing the oxide layer to expose an unoxidized top surface and sidewalls of the fin and unoxidized sidewalls of the dummy gate structure;
- epitaxially growing a cap layer on the unoxidized top surface and sidewalls of the fin and the unoxidized sidewalls of the dummy gate structure;
- forming a source/drain feature on the fin;
- and
- replacing the dummy gate structure with a metal gate structure.
A method, comprising:
- providing a workpiece including:
- a fin over a substrate,
- a first oxide layer disposed over sidewalls of the fin, and
- a dummy gate structure over the fin and directly above a first portion of the first oxide layer,
- wherein the first oxide layer further includes a second portion uncovered by the dummy gate structure;
- oxidizing exposed surfaces of the fin and the dummy gate structure to form a second oxide layer;
- removing the second portion of the first oxide layer and the second oxide layer, thereby exposing unoxidized surfaces of the fin and the dummy gate structure;
- and
- forming an epitaxial layer on the unoxidized surfaces of the fin and the dummy gate structure,
- wherein the epitaxial layer has a thickness equal to or greater than the second oxide layer.
A semiconductor structure, comprising:
- a substrate;
- a fin over the substrate and extending lengthwise along a first direction;
- a gate structure over the fin and extending lengthwise along a second direction perpendicular to the first direction;
- and
- gate spacers on sidewalls of the gate structure,
- wherein the fin has a first portion directly under the gate structure and a second portion directly under the gate spacers,
- wherein the second portion has a width greater than a width of the first portion along the second direction.
Dependencies are inferred from the claim text.