Method for manufacturing insulated gate bipolar transistor
AssigneeMosel Vitelic, Inc.
InventorsTa-Wei Tseng, Yun-Kuei Chiu, Chun-Sheng Chen
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Abstract
A method for manufacturing an insulated gate bipolar transistor includes (a) providing a substrate comprising a front side and a back side; (b) forming at least one front side element and at least one front side metal layer on the front side of the substrate; (c) performing a thinning process on the back side of the substrate; (d) performing a laser pre-treatment process on the back side of the substrate; (e) performing at least one ion doping process on the back side of the substrate for forming at least one ion doping layer; (f) performing an annealing process on the back side of the substrate; and (g) forming a collector metal layer on the back side of the substrate.
Claims6
A method for manufacturing an insulated gate bipolar transistor, comprising steps of:
- (a) providing a substrate comprising a front side and a back side;
- (b) forming at least one front side element and at least one front side metal layer on the front side of the substrate;
- (c) performing a thinning process on the back side of the substrate;
- (d) performing a laser pre-treatment process on the back side of the substrate;
- (e) performing at least one ion doping process on the back side of the substrate for forming at least one ion doping layer;
- (f) performing an annealing process on the back side of the substrate;
- and
- (g) forming a collector metal layer on the back side of the substrate.
Dependencies are inferred from the claim text.