Semiconductor device and method for manufacturing the same, and electronic system including semiconductor device

A manufacturing method of a semiconductor device, the method comprising:

• forming a first doped monocrystalline semiconductor layer having a first conductivity type on a semiconductor substrate;
• forming a stacking structure on the first doped monocrystalline semiconductor layer, such that the stacking structure includes alternating insulation layers and sacrificial layers;
• forming a channel structure penetrating the stacking structure and the first doped monocrystalline semiconductor layer;
• forming an opening penetrating the stacking structure to expose a part of the first doped monocrystalline semiconductor layer, such that a first part of the first doped monocrystalline semiconductor layer is not exposed and a second part of first doped monocrystalline semiconductor layer is exposed;
• doping a second conductivity type dopant to the second part of the first doped monocrystalline semiconductor, such that the first part of the first doped monocrystalline semiconductor layer is a first conductivity type region and the second part of the first doped monocrystalline semiconductor layer is a second conductivity type region;
• replacing the sacrificial layers with gate electrodes:
• removing the semiconductor substrate;
• and
• forming a doped polycrystalline semiconductor layer on the doped monocrystalline semiconductor layer, the channel structure, and the gate stacking structure.

An electronic system, comprising:

• a main substrate;
• a semiconductor device on the main substrate;
• and
• a controller electrically connected to the semiconductor device on the main substrate,
• wherein the semiconductor device, includes:
• a gate stacking structure having alternating gate electrodes and insulation layers on an insulation portion,
• a channel structure crossing the insulation portion and extending through the gate stacking structure, and
• a horizontal conductive layer connected to the channel structure between the insulation portion and the gate stacking structure, the horizontal conductive layer including a doped monocrystalline semiconductor layer with a dopant.