Semiconductor device

A semiconductor device comprising:

• an active pattern extending in a first direction;
• a gate structure comprising a gate electrode extending in a second direction and a gate spacer on the active pattern, wherein the gate electrode and the gate spacer are spaced apart from each other in the first direction;
• a source/drain pattern on the active pattern;
• a contact barrier layer on the source/drain pattern;
• and
• a contact filling layer on the contact barrier layer,
• wherein the contact filling layer comprises a first portion surrounded by the contact barrier layer and a second portion on the first portion that does not overlap the contact barrier layer in the first direction, and
• wherein a first width along the first direction of the first portion is smaller than a second width along the first direction of the second portion, and outer walls of the contact barrier layer and outer walls of the second portion of the contact filling layer extend along a common plane.

A semiconductor device comprising:

• an active pattern extending in a first direction;
• a gate structure comprising a gate electrode extending in a second direction and a gate spacer on the active pattern, wherein the gate electrode and the gate spacer are spaced apart from each other in the first direction;
• a source/drain pattern on the active pattern;
• a silicide layer on the source/drain pattern;
• a contact barrier layer on the silicide layer;
• and
• a contact filling layer on the contact barrier layer,
• wherein the contact filling layer comprises a first portion surrounded by the contact barrier layer and a second portion on the first portion that does not overlap the contact barrier layer in the first direction,
• wherein a first width of the first portion along the first direction is smaller than a second width of the second portion along the first direction,
• wherein outer walls of the contact barrier layer and outer walls of the second portion of the contact filling layer extend along a common plane,
• wherein the contact barrier layer comprises titanium nitride and the contact filling layer comprises tungsten, and
• wherein an uppermost point of the contact barrier layer is between an upper surface of the gate electrode and a lower surface of the contact filling layer.