Integrated circuit structure with backside contact stitching

An integrated circuit structure, comprising:

• a first fin;
• a second fin laterally spaced apart from the first fin;
• a first epitaxial source or drain structure at an end of the first fin;
• a second epitaxial source or drain structure at an end of the second fin;
• and
• a conductive contact structure beneath and in contact with the first epitaxial source or drain structure and the second epitaxial source or drain structure, the conductive contact structure continuous between the first epitaxial source or drain structure and the second epitaxial source or drain structure, and the conductive contact structure having a first vertical thickness beneath the first epitaxial source or drain structure and the second epitaxial source or drain structure greater than a second vertical thickness in a region between the first epitaxial source or drain structure and the second epitaxial source or drain structure.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a first plurality of horizontally stacked nanowires or a first fin;
• a second plurality of horizontally stacked nanowires or a second fin laterally spaced apart from the first plurality of horizontally stacked nanowires or the first fin;
• a first epitaxial source or drain structure at an end of the first plurality of horizontally stacked nanowires or the first fin;
• a second epitaxial source or drain structure at an end of the second plurality of horizontally stacked nanowires or the second fin;
• and
• a conductive contact structure beneath and in contact with the first epitaxial source or drain structure and the second epitaxial source or drain structure, the conductive contact structure continuous between the first epitaxial source or drain structure and the second epitaxial source or drain structure, and the conductive contact structure having a first vertical thickness beneath the first epitaxial source or drain structure and the second epitaxial source or drain structure greater than a second vertical thickness in a region between the first epitaxial source or drain structure and the second epitaxial source or drain structure.