Semiconductor device having gate electrode and interlayer insulating film provided in trench
AssigneeFuji Electric Co., Ltd.
InventorsYusuke KOBAYASHI, Naoyuki OHSE, Shinsuke HARADA
Life of this patent
Estimating the term…
Abstract
At a front surface of a silicon carbide base, an n−-type drift layer, a p-type base layer, a first n+-type source region, a second n+-type source region, and a trench that penetrates the first and the second n+-type source regions and the p-type base layer and reaches the n-type region are provided. In the trench, the gate electrode is provided via a gate insulating film, an interlayer insulating film is provided in the trench on the gate electrode.
Claims20
A trench-type power semiconductor device, comprising:
- a n-type drift layer;
- a p-type base layer provided above the drift layer;
- a plurality of trenches penetrating through the base layer;
- a p-type region in contact with bottoms of at least three of the plurality of trenches;
- and
- a n-type region in contact with the bottoms of the at least three of the plurality of trenches and having an impurity concentration higher than an impurity concentration of the drift layer.
A trench-type power semiconductor device, comprising:
- a n-type drift layer;
- a p-type base layer provided above the drift layer;
- a plurality of trenches penetrating through the base layer and extending in parallel with each other;
- a plurality of p-type regions each having a striped shape and extending in a width direction of the plurality of trenches so as to be in contact with bottoms of the trenches;
- and
- each of a plurality of n-type regions having a striped shape and extending in the width direction of the plurality of trenches so as to be in contact with the bottoms of the plurality of trenches, the plurality of n-type regions having an impurity concentration higher than an impurity concentration of the drift layer.
A trench-type power semiconductor device having a plurality of unit cells, comprising:
- a n-type drift layer;
- a p-type base layer provided above the drift layer;
- a plurality of trenches penetrating through the base layer and extending in parallel with each other;
- a p-type region in contact with bottoms of at least three of the plurality of trenches;
- and
- a n-type region in contact with a bottom surface of the base layer and having an impurity concentration higher than an impurity concentration of the drift layer, wherein
- in a cross section passing through the p-type region in a width direction of the plurality of trenches, the bottom surface of the base layer is in contact with the n-type region in one of the plurality of unit cells, and the bottom surface of the base layer is in contact with the p-type region in another one of the plurality of unit cells.
Dependencies are inferred from the claim text.