High mobility tft driving device and manufacturing method thereof
AssigneeSeoul National University R&Db Foundation
InventorsSoo Yeon LEE, Jin Kyu LEE
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Abstract
The present invention relates to a high-mobility driving element and a method for manufacturing same, the high-mobility driving element comprising: a substrate; an insulating film disposed on the substrate; a channel layer disposed on at least a partial region of the insulating film and including a metal oxide; a source electrode and a drain electrode connected to the channel layer and disposed on the insulating film and either side of the channel layer to face each other; and a protective layer covering all of the channel layer, the source electrode, and the drain electrode, wherein the channel layer comprises a plurality of fluorinated regions in at least a partial region between the source electrode and the drain electrode.
Claims17
A high mobility driving device,
- comprising
- a substrate;
- an insulating film positioned on the substrate;
- a channel layer positioned on at least some areas of the insulating film and comprising m etal oxide;
- a source electrode and a drain electrode connected to the channel layer and located on th e insulating film to face each other on both sides centered on the channel layer;
- a protective layer covering all the channel layer, the source electrode and the drain electr ode,
- wherein the channel layer comprises a plurality of local fluorination treatment areas (F tr eatment areas) in at least some areas between the source electrode and the drain electrode.
A manufacturing method of the high mobility driving device according to cl aim 1, comprising
- preparing a substrate;
- forming a channel layer comprising metal oxide on the substrate;
- arranging photoresist, in which holes with a certain size are formed on a certain position, on the channel layer;
- exposing fluorine through the holes;
- removing the photoresist using a removal solution;
- forming a source electrode and a drain electrode to face each other on both sides centered on the channel layer;
- and
- forming a protective layer to cover all the channel layer, the source electrode and the drai n electrode.
Dependencies are inferred from the claim text.