High electron mobility transistor

A high electron mobility transistor (HEMT) comprising:

• a GaN epi-layer;
• a first passivation layer deposited on the GaN epi-layer;
• a source electrode metal recessed into the first passivation layer and deposited on the GaN epi-layer for forming an Ohmic contact on the GaN epi-layer, the source electrode metal having a source field plate with a source field plate length Lsf;
• a drain electrode metal recessed into the first passivation layer and deposited on the GaN epi-layer for forming an Ohmic contact on the GaN epi-layer, the drain electrode metal having a drain field plate with a drain field plate length Ldf, wherein Ldf>Lsf;
• a gate electrode recessed into the first passivation layer and deposited on the GaN epi-layer and situated between the source electrode metal and the drain electrode metal;
• and
• a field plate situated between the gate electrode and the drain electrode metal.