US 2024/0405078 A1 · INTEGRATED DEVICES WITH CONDUCTIVE BARRIER STRUCTURE

Abstract

The present disclosure generally relates to integrated devices with a conductive barrier structure. In an example, a semiconductor device includes a substrate, a conductive barrier structure, a channel layer, a barrier layer, a gate, and a conductive structure. The substrate is of a first semiconductor material. The conductive barrier structure is on the substrate. The channel layer is of a second semiconductor material and is on the conductive barrier structure. The barrier layer is on the channel layer, and the channel layer is between the barrier layer and the conductive barrier structure. The gate is over the barrier layer opposing the channel layer. The conductive structure is electrically coupled between the conductive barrier structure, the channel layer, and the barrier layer.

Claims32

Dependent claims

A semiconductor device comprising:

a substrate of a first semiconductor material;
a conductive barrier structure on the substrate;
a channel layer of a second semiconductor material on the conductive barrier structure;
a barrier layer on the channel layer, in which the channel layer is between the barrier layer and the conductive barrier structure;
a gate over the barrier layer opposing the channel layer;
and
a conductive structure electrically coupled between the conductive barrier structure, the channel layer, and the barrier layer.

4 more elements

A semiconductor device, comprising:

a substrate of a first semiconductor material;
a conductive barrier structure on the substrate;
a channel layer on the conductive barrier structure;
a barrier layer on the channel layer, in which the channel layer is between the barrier layer and the conductive barrier structure;
a first gate and a second gate over the barrier layer opposing the channel layer;
and
a first electrical contact and a second electrical contact on a surface of the barrier layer, in which the first gate and the second gate are between the first electrical contact and the second electrical contact.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application

18/326,698Filed 31 May 2023

Published

5 Dec 2024

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10D 62/8503
Being Group III-V materials, e.g. GaAs: nitride Group III-V materials, e.g. AlN or GaN
H10D 30/015
Manufacture or treatment: of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
H10D 30/475
High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]: having wider bandgap layer formed on top of lower bandgap…
H10D 64/513
Disposition of the gate electrodes, e.g. buried gates: within recesses in the substrate, e.g. trench gates, groove gates or buried gates

Integrated devices with conductive barrier structure

Life of this patent

Integrated devices with conductive barrier structure

Life of this patent

Abstract

Claims32